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FMA3011
12.7-16GHZ MMIC POWER AMPLIFIER
FEATURES:
* * * * * Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss < -15dB Output Return Loss < -15dB
Preliminary Datasheet v2.1
FUNCTIONAL SCHEMATIC:
VDD
RF Input RF Output
GENERAL DESCRIPTION:
The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power amplifier with sufficiently high gain to ensure that IMD products from preceding stages can be kept to an absolute minimum. Coupled with the the low IMD of this device, highly linear system performance can be achieved, while preserving the overall system gain requirements. It is suitable for use in digital microwave radios and electronic warfare applications. Balanced configuration using Lange couplers ensures excellent return losses and tolerance to external loads. The input stage is self-biased.
VG
TYPICAL APPLICATIONS:
* * * * Electronic Warfare Broadband Communication Infrastructure Cellular Backhaul
Point to Point Radio
ELECTRICAL SPECIFICATIONS:
PARAMETER
Small Signal Gain Input Return Loss Output Return Loss Output Power at 1dB compression point 3rd Order Output Intercept Point (OIP3) Noise Figure Self-bias Current
CONDITIONS (VDD=7V, ID=450mA)
12-16GHz 12-16GHz 12-16GHz 13GHz 15GHz 13GHz (measured at 22dBm total output power) 15GHz (measured at 22dBm total output power) 12-16GHz Total for both input stages
MIN
26.5 -12 -12 26 26 35.5 35.5
TYP
30 -15 -15 28 28 37 37 4 70
MAX
UNITS
dB dB dB dBm dBm dBm dBm
4.9 100
dB mA
Note: TAMBIENT = +25C, Z0 = 50
1
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Tel: +44 (0) 1325 301111
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FMA3011
Preliminary Datasheet v2.1
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
Max Input Power Gate Voltage Drain Voltage Power Dissipation Operating Temp Storage Temp
SYMBOL
Pin VG1 VDD Pdiss Toper Tstor
ABSOLUTE MAXIMUM
+25dBm -2V +10V 3.5W -40C to +85C -55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
PAD LAYOUT:
PAD REF
A B C D E F G H I J K L M N O P
PAD NAME
I D1A G23A D2AA D2AB D3AB D3AC D3AA O D3BA D3BC D3BB D2BB D2BA G23B D1B
DESCRIPTION
PIN COORDINATES (m)
(96,503) (671,2068) (1721, 2068) (2171,2068) (2321,2068) (2471,2068)
B
C
DEF
G
H I
RF in 1st Stage Drain 2nd and 3rd Gate 2nd Drain Direct 2nd Drain With Resistor 3rd Drain With Resistor Alt 3rd Drain Direct 3rd Stage Drain Direct RF Output 3rd Stage Drain Direct Alt 3rd Drain Direct 3rd Drain With Resistor 2nd Drain With Resistor 2nd Drain Direct 2nd and 3rd Gate 1st Stage Drain
A
(3198,2040) (3560,2068) (3604,1698) (3560,132) (3198,160) (2471,132) (2321,132) (2171,132) (1721,132) (671,132)
P
O
NML
K
J
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening. Pads without identifiers are ground connections used in wafer testing.
DIE SIZE (m)
3700 x 2200
DIE THICKNESS (m)
100
MIN. BOND PAD PITCH (m)
150um
MIN. BOND PAD OPENING (m x m )
100 x 100
2
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Tel: +44 (0) 1325 301111
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FMA3011
Preliminary Datasheet v2.1
TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS:
Note: RF on wafer measurements conducted at a lower bias point. Gain increases to the typical value at full bias. Measurement Conditions: VG1= -0.5V, ID= 180mA, VDD= 5V, TAMBIENT = 25C Gain
30 29 28
Input Return Loss
0 -5 -10 Return Loss (dB) -15 -20 -25 -30
27 Gain (dB) 26 25 24 23 22 21 20 12 13 14 Frequency (GHz) 15 16
-35 -40 12 13 14 Frequency (GHz) 15 16
Output Return Loss
0 -5 -10 Return Loss (dB)
Isolation (dB) -20 -25 -30 -35
Reverse Isolation
-15 -20 -25 -30
-40 -45 -50 -55 -60
-35 -40 12 13 14 Frequency (GHz) 15 16
-65 -70 12 13 14 Frequency (GHz) 15 16
Input Impedance
1.0
Output Impedance
6 0.
6 0.
Swp Max 16GHz
2. 0
1.0
Swp Max 16GHz
2. 0
0.8
0.8
0 3.
0 4.
0.2
5.0
10.0
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0
0
0
.4 -0
.4 -0
.0 -2
-0 .6
-0 .6
-0.8
.0 -2
Swp Min 12GHz
-1.0
Swp Min 12GHz
-0.8
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
-1.0
Website: www.filtronic.com
-5. 0
-4 .0
-3 .0
-5.
-4 .0
0
2 -0.
2 -0.
-10.0
0. 4
-10.0
-3 .0
0. 4
0 3.
0 4.
5.0
0.2
10.0
FMA3011
Preliminary Datasheet v2.1
TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS:
Note: RF on wafer measurements conducted at a lower bias point. Gain increases to the typical value at full bias. Measurement Conditions: VG1= -0.5V, ID= 180mA, VDD= 5V, TAMBIENT = 25C
Frequency 12.000000 12.100000 12.200000 12.300000 12.400000 12.500000 12.600000 12.700000 12.800000 12.900000 13.000000 13.100000 13.200000 13.300000 13.400000 13.500000 13.600000 13.700000 13.800000 13.900000 14.000000 14.100000 14.200000 14.300000 14.400000 14.500000 14.600000 14.700000 14.800000 14.900000 15.000000 15.100000 15.200000 15.300000 15.400000 15.500000 15.600000 15.700000 15.800000 15.900000 16.000000 ReS11 0.02862 0.04739 0.05071 0.05901 0.07374 0.08162 0.08652 0.08131 0.07224 0.06434 0.05353 0.03684 0.01690 -0.00248 -0.01801 -0.03347 -0.04619 -0.06234 -0.07110 -0.07895 -0.08032 -0.08049 -0.08831 -0.08713 -0.08305 -0.07201 -0.06335 -0.06197 -0.04812 -0.03018 -0.00996 0.00530 0.01873 0.03561 0.05833 0.07723 0.09221 0.10365 0.12069 0.13756 0.15418 ImS11 0.14634 0.14199 0.13091 0.11523 0.09515 0.07863 0.06465 0.04328 0.02250 -0.00163 -0.01339 -0.02027 -0.02392 -0.03228 -0.03173 -0.02676 -0.01233 -0.00087 0.00140 0.01599 0.02743 0.04620 0.06197 0.07151 0.08453 0.09639 0.11361 0.12273 0.12781 0.13962 0.15195 0.15823 0.15667 0.15014 0.14512 0.14294 0.13881 0.12732 0.11209 0.08919 0.07345 ReS21 -6.67930 -3.50866 -0.24776 3.18014 6.72798 10.21719 13.39561 16.42668 19.08678 21.43423 23.36681 24.87215 25.72424 26.09245 25.70407 24.80453 23.09648 21.00504 18.32389 15.46391 12.11258 8.78339 5.16222 1.55327 -2.05811 -5.39476 -8.61700 -11.48291 -14.12595 -16.44033 -18.40505 -19.86278 -20.88333 -21.43556 -21.67941 -21.46588 -20.88945 -19.93439 -18.55769 -16.75654 -14.71157 ImS21 22.40440 23.34877 23.97320 24.08470 23.70643 22.56068 21.06022 18.92982 16.47102 13.71294 10.66305 7.07652 3.35031 -0.53323 -4.42088 -8.34490 -11.90000 -15.11085 -17.87180 -20.31469 -22.07279 -23.44850 -24.30297 -24.54886 -24.14934 -23.34800 -22.07628 -20.37179 -18.29621 -15.96085 -13.31864 -10.37735 -7.40515 -4.37013 -1.27367 1.79864 4.79123 7.75941 10.59434 13.19331 15.56911 ReS12 -0.00002 0.00065 0.00030 0.00038 0.00028 0.00054 0.00018 0.00102 0.00107 0.00135 0.00138 0.00152 0.00157 0.00209 0.00170 0.00205 0.00219 0.00164 0.00200 0.00136 0.00233 0.00222 0.00178 0.00197 0.00129 0.00180 0.00192 0.00166 0.00163 0.00146 0.00124 0.00121 0.00121 0.00093 0.00029 0.00053 0.00064 0.00080 -0.00001 0.00010 -0.00011 ImS12 -0.00055 -0.00070 -0.00104 -0.00081 -0.00133 -0.00128 -0.00102 -0.00101 -0.00128 -0.00114 -0.00131 -0.00090 -0.00083 -0.00036 -0.00056 -0.00013 -0.00038 0.00006 0.00062 0.00027 0.00054 0.00064 0.00106 0.00069 0.00105 0.00118 0.00099 0.00126 0.00080 0.00120 0.00156 0.00175 0.00143 0.00176 0.00159 0.00179 0.00179 0.00255 0.00210 0.00229 0.00142 ReS22 -0.08042 -0.06926 -0.06486 -0.05980 -0.05717 -0.05739 -0.05660 -0.05818 -0.05909 -0.06285 -0.06789 -0.07716 -0.08625 -0.09435 -0.10434 -0.11028 -0.11522 -0.12067 -0.12163 -0.12588 -0.13015 -0.13013 -0.12897 -0.12704 -0.12680 -0.12620 -0.12231 -0.11860 -0.11485 -0.11173 -0.10638 -0.10103 -0.09553 -0.08894 -0.08270 -0.07516 -0.06926 -0.06143 -0.05579 -0.04917 -0.04345 ImS22 0.08541 0.08047 0.07525 0.06616 0.05895 0.05220 0.04683 0.03881 0.03077 0.02316 0.01570 0.01088 0.00932 0.00948 0.01258 0.01474 0.01902 0.02500 0.02956 0.03534 0.04070 0.04824 0.05541 0.06067 0.06672 0.07174 0.07730 0.08131 0.08523 0.09098 0.09579 0.09968 0.10018 0.10282 0.10265 0.10419 0.10464 0.10268 0.10057 0.09557 0.09163
4
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FMA3011
Preliminary Datasheet v2.1
TYPICAL PERFORMANCE FOR FULL BIAS JIG BASED MEASUREMENTS:
Note: Measurement Conditions: VG= -0.35V, VDD= 7V, Id=450mA IM3 Level (dBc) vs Total Output Power (dBm)
-10 -15
13.25GHz Amb 15.25GHz Amb
Gain
35 34 33 32
Gain (dB)
-20
IM3 (dBc
-25 -30 -35 -40 -45 -50 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Total Output Power (dBm)
31 30 29 28 27 26 25 12.75 13.25 13.75 14.25 14.75 15.25 15.75 Frequency (GHz)
Power Transfer Characteristic 13GHz P-1dB
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14
Power Transfer Characteristic 15GHz P-1dB
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12
Gain Ptrans
Pout Gain
Gain
Ptrans
Pout Gain
Pout_lin-1
Pout_lin-1
-16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 Input Pwr (dBm)
-5
-4
-3
-2
-1
0
-16 -15 -14 -13 -12 -11 -10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Input Pwr (dBm)
5
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FMA3011
Preliminary Datasheet v2.1
TYPICAL PERFORMANCE FOR FULL BIAS JIG BASED TEMPERATURE MEASUREMENTS:
Note: Measurement Conditions: VG= -0.35V, VDD= 7V, Id=450mA TAMBIENT = -40C, +25C and +80C Gain
35 34 33
1dB Compression Point
30 29.5 29 28.5
P-1dB (dBm)
32
Gain (dB)
31 30 29 28 27 26 25 12.75 13.25 13.75 14.25 14.75 Frequency (GHz) 15.25 15.75 HG1_25 HG1_40 HG1_80
28 27.5 27 26.5 26 25.5 25 12.75 13.25 13.75 14.25 14.75 Frequency (GHz) 15.25 15.75 HG1_25 HG1_40 HG1_80
Third Order Output Intercept Point (OIP3)
39
Fifth Order Output Intercept Point (OIP5)
35 34.5
OIP3 (dBm) @22dBm Outpu
38.5 38 37.5 37 36.5 36 35.5 35 34.5 34 12.75 13.25 13.75 14.25 14.75 Frequency (GHz) 15.25 15.75 HG1_25 HG1_40 HG1_80
OIP5 (dBm) @22dBm Outpu
34 33.5 33 32.5 32 31.5 31 30.5 30 12.75 13.25 13.75 14.25 14.75 Frequency (GHz) 15.25 15.75 HG1_25 HG1_40 HG1_80
13.25GHz IM3 Level vs Output Power
-10 -15 -20 HG1_25 -10 -15 -20
15.25GHz IM3 Level vs Output Power
IM3 (dBc)
HG1_40
HG1_25 -25 -30 -35 -40 -45 -50 HG1_40 HG1_80
IM3 (dBc)
-25 -30 -35 -40 -45 -50
HG1_80
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Output Power (dBm)
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Output Power (dBm)
6
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FMA3011
Preliminary Datasheet v2.1
BIASING CIRCUIT SCHEMATIC:
VDD VG 100nF 100pF 100pF 100nF
RF Output RF Input VDD
VG 100nF 100pF 100pF 100nF
ASSEMBLY DIAGRAM:
C1
Gate C1
100pF Capacitor
Drain C1
Note: Bond Wire length should be kept to a minimum
C1
C1 Gate
COMPONENT
C1 Drain
BILL OF MATERIALS:
LABEL
Board C1
All RF tracks should be 50 characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100nF, 0402
7
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FMA3011
Preliminary Datasheet v2.1
EFFECT OF BONDWIRES AND BOND COMPENSATION:
1
A pair of bondwires in the `V' formation shown in the figure above, should if kept reasonably short, yield a combined inter-connect inductance of below 0.25nH. The FMA3011 has excellent return losses (blue triangles) and these are modified by the addition of a 0.25nH bondwire inductance (pink squares) as shown in the figures below.
5 . 0 6 . 0 7 . 0 8 . 0 9 . 0 0 . 1
9. 0 8. 0 7. 0 6. 0 5. 0 4.0 3.0 2.0 1.0 2 . 1 -0.1 4 . 1 6 . 1 8 . 1 0 . 2
Swp Max 16GHz
1 9 . 0 8. 0 7. 0 6. 0 5. 0 4.0 3.0 2.0
Swp Max 16GHz
-0.2
S(2,2) matched S(2,2) with bonds S(2,2) RFOW
3 -0. 4 -0. .5 -0 .6 -0 .7 -0 .8 -0 9 . -0
1.0 5 . 0 6 . 0 7 . 0 8 . 0 9 . 0 0 . 1 -0.1 2 . 1 4 . 1 6 . 1 8 . 1 0 . 2
Swp Min 12GHz
0
-0.2
S(1,1) matched
S(1,1) with bonds
S(1,1) RFOW
0 -5 -10
.7 -0 .8 -0 .9 -0
-0.3 4 -0. .5 -0
Swp Min 12GHz
0
Return Loss (dB)
.6 -0
-15 -20 -25 -30 -35 -40 12 13 14 Frequency (GHz) 15 16
0 -5 -10 ) B d -15 ( s s o L -20 n r u t e -25 R -30 -35 -40 12 13 14 Frequency (GHz) 15 16
DB(|S(2,2)|) matched
DB(|S(2,2)|) with bonds
DB(|S(2,2)|) RFOW
DB(|S(1,1)|) matched
DB(|S(1,1)|) with bonds
DB(|S(1,1)|) RFOW
Dimensions in mm. Material is 10 thou 4350 Er=3.38
Once bonded the return losses are still at a reasonable level. They can be improved with a simple compensation network. The figures also show the effect of this bondwire compensation network (brown diamonds). The network is shown at the end of this section.
8
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FMA3011
Preliminary Datasheet v2.1
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections.
ORDERING INFORMATION:
PART NUMBER
FMA3011 (Gel-pak available on request)
DESCRIPTION
Die in Waffle-pack
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise data and large-signal models are available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
9
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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